Semiconductor optical modulation device
文献类型：专利
| 作者 | TSUJI, MASAYOSHI, C/O NEC CORPORATION |
| 发表日期 | 1997-08-27 |
| 专利号 | EP0726483A3 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical modulation device |
| 英文摘要 | The invention provides a semiconductor optical modulation device which has low power dissipation, high extinction ratio and high speed response features. An n-type InP clad layer (2), an n--type InAlAs-InAlGaAs composition inclination multiple layer (3), a p-type InP clad layer (4) and a p+-type InGaAs contact layer (5) are layered on an n-type InP substrate (1). The layers are etched up to an intermediate location of the n-type clad layer (2) to form a rib waveguide, and a positive electrode (6) is formed on an upper portion of the rib waveguide. Further, a negative electrode (7) is formed on the substrate (1). |
| 公开日期 | 1997-08-27 |
| 申请日期 | 1996-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67371]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | TSUJI, MASAYOSHI, C/O NEC CORPORATION. Semiconductor optical modulation device. EP0726483A3. 1997-08-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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