Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets
文献类型：专利
| 作者 | BHAT, RAJARAM; SIZOV, DMITRY SERGEEVICH; ZAH, CHUNG-EN |
| 发表日期 | 2013-12-05 |
| 专利号 | WO2013181040A1 |
| 著作权人 | CORNING INCORPORATED |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets |
| 英文摘要 | Laser diodes and methods of fabricating laser diodes are disclosed. A laser diode includes a substrate including (Al,In)GaN, an n side cladding layer including (Al,In)GaN having an n-type conductivity, an n side waveguide layer including (Al,In)GaN having an n-type conductivity, an active region, a p side waveguide layer including (Al,In)GaN having a p-type conductivity, a p side cladding layer including (Al,In)GaN having a p-type conductivity, and a laser cavity formed by cleaved facets, The substrate includes a crystal structure having a surface plane orientation within about 10 degrees of a 2023 or a 2023 crystallographic plane orientation. The laser cavity is formed by cleaved facets that have an orientation corresponding to a nonpolar plane of the crystal structure of the substrate. |
| 公开日期 | 2013-12-05 |
| 申请日期 | 2013-05-22 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67382]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CORNING INCORPORATED |
| 推荐引用方式 GB/T 7714 | BHAT, RAJARAM,SIZOV, DMITRY SERGEEVICH,ZAH, CHUNG-EN. Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets. WO2013181040A1. 2013-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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