Buried heterostructure semiconductor laser
文献类型：专利
| 作者 | KURODA NAOTAKA |
| 发表日期 | 1989-12-20 |
| 专利号 | JP1989315184A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried heterostructure semiconductor laser |
| 英文摘要 | PURPOSE:To flatten the buried part for heightening an yield and reliability by making any of a vector parallel in the longitudinal direction of the current conductive part in the shape of a mesa stripe, a normal vector of the OFF substrate surface and a surface azimuth vector of the surface before putting OFF to be inside the same plane. CONSTITUTION:An InP layer doped with sulfur is used for an N-clad layer 11, a non- doped InGaAsP layer lattice-matched with InP is used for an active region, an InP layer doped with zinc is used for a P-clad layer 13, an InGaAsP layer doped with zinc is used for a cap layer 4 and an InP layer doped with iron is used for a high- resistance semiconductor layer 15. Further, an InP substrate doped with sulfur whose (100) surface is made OFF in the direction A by an OFF angle theta(0.5-10 deg.) is used for a conductive type semiconductor substrate 16, and the current conductive part is formed in the mesa-striped shape in the direction parallel to the direction. When a P-side electrode 17 and an N-side electrode 18 are made conductive, the current flows through the current conductive part (the part of the double heteroconstruction in the mesa-striped shape), while the current does not flow through the current blocking part (the part of a high-resistance semiconductor layer 15). Thereby, a buried layer on both sides of the current conductive part can be flattened so that a high yield and high reliability can be realized. |
| 公开日期 | 1989-12-20 |
| 申请日期 | 1989-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67384]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KURODA NAOTAKA. Buried heterostructure semiconductor laser. JP1989315184A. 1989-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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