Infrared semiconductor laser element
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; EBE KOJI |
| 发表日期 | 1987-12-23 |
| 专利号 | JP1987296592A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Infrared semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce currents flowing through the P-N junction section of a buffer layer, and buried layer, to minimize oscillation threshold currents and to enable low-current operation by wrapping the periphery of an active layer held by a clad layer by specific buffer layer and buried layer. CONSTITUTION:A P-PbSnTeSe first clad layer 2 having predetermined layer thickness and width, an active layer 3 consisting of PbSnTe and an N-PbSnTeSe second clad layer 4 are formed in a laminating manner in succession onto a P-PbTe substrate 1 through P-PbTeSe buffer layer 21 having an energy gap larger than PbSnTe constituting the active layer 3. An N-PbTeSb buried layer 22 having the energy gap layer then PbSnTe organizing the active layer 3 is shaped onto the second clad layer 4 and onto the partially exposed buffer layer 21, and electrodes 6, 7 are each applied to the buried layer 22 and the rear of the substrate Accordingly, currents flowing through the P-N junction section of the buffer layer 21 and the buried layer 21 can be reduced, and currents are confined effectively to the active layer 3, thus lowering the threshold currents of laser oscillation. |
| 公开日期 | 1987-12-23 |
| 申请日期 | 1986-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67392]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,EBE KOJI. Infrared semiconductor laser element. JP1987296592A. 1987-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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