Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser
文献类型：专利
| 作者 | FUJII TOSHIO; SANDOUUADARUSHIYU |
| 发表日期 | 1990-06-05 |
| 专利号 | JP1990146787A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser |
| 英文摘要 | PURPOSE:To simultaneously grow epitaxial crystal layers having mutually different properties by finishing mutually different crystal orientation to a crystal substrate for performing epitaxial crystal growth. CONSTITUTION:A mask layer 42 is formed on a GaAs substrate 40. When the mask layer 42 in an intended region for face finish is removed, while performing etching on the exposed GaAs substrate 40 with an etching liquid for (311) face finish, the central part becomes (100) face and the periphery becomes (311) A face or (311) B face. The mask layer 42 is removed. An AlXGa1-XAs layer is piled up on the substrate 40 by a gas molecular ray epitaxial method. At this time, for instance, when a substrate temperature is controlled, the AlXGa1-XAs layers having different composition ratios x are simultaneously formed. That is, when (100) face and (311) A face are finished and the substrate temperature is raised, for instance, to 520 deg.C, (x) becomes 0.25 on (100) face, while (x) becomes 0.1 on (311) A face. |
| 公开日期 | 1990-06-05 |
| 申请日期 | 1988-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67394]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | FUJII TOSHIO,SANDOUUADARUSHIYU. Formation of epitaxial crystal layer and manufacture of stripe type semiconductor laser. JP1990146787A. 1990-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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