Semiconductor photo detecting device and semiconductor optical modulation device
文献类型：专利
| 作者 | KONO KENJI; WAKITA KOICHI |
| 发表日期 | 1991-07-11 |
| 专利号 | JP1991161980A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor photo detecting device and semiconductor optical modulation device |
| 英文摘要 | PURPOSE:To improve external quantum efficiency by constituting a semiconductor photo detecting device by using an optical amplifier part and a photo detecting part formed on the same substrate. CONSTITUTION:On a semiconductor substrate 1, the following are formed; a semiconductor layer 3 as a clad layer, a semiconductor layer 4 as an optical guide layer, a semiconductor layer 5 having a quantum well or multilayer quantum well structure, a semiconductor layer 7 as an optical guide layer, a semiconductor layer 8 as a clad layer, and a semiconductor layer 9 as a cap layer. In this case, a diffraction grating is formed as follows; a flat interface 10R is formed on one-half part between the layer 7 and the layer 8, and an interface 10A where protrusions and recesses are repeated is formed on the other one-half part. A laminated body having the layer 8 and the layer 9 is isolated into a laminated body 11A and a laminated body 12R by an insulating layer 12. An optical amplifier part A to which a light L is inputted from the outside is constituted in a region under the laminated body 11A. A photo detecting part R to which the light from the amplifier part A is inputted is constituted in the region under the laminated body 11R. |
| 公开日期 | 1991-07-11 |
| 申请日期 | 1989-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67398]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KONO KENJI,WAKITA KOICHI. Semiconductor photo detecting device and semiconductor optical modulation device. JP1991161980A. 1991-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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