Superlattice element and manufacture thereof
文献类型：专利
| 作者 | NAGANUMA MITSURU; MIKAMI OSAMU; NOJIMA SHUNJI |
| 发表日期 | 1990-05-10 |
| 专利号 | JP1990122682A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Superlattice element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a quantum wire structure having quite low fluctuation of width by forming quantum wire having quite uniform cross-sectional dimension with high density at the step section of sawtooth shape. CONSTITUTION:Only n-type Al0.4Ga0.6As layer 11 is selectively etched using fluorine etchant thus forming saw-tooth steps at the side face of a mesa. Then GaAs quantum wires 16 are grown with the step sections 12a being employed as masks. Thereafter, undoped Al0.2Ga0.8As layers 17 are formed by molecular beam epitaxy employing Ga and Al molecular beams coming from the direction of an arrow 15 and As molecular beam coming from the direction of arrow 14 or 15. By such arrangement, the most important parameter for the quantum well wires, i.e., the cross-sectional dimension of the GaAs quantum wires 16, can be determined accurately. The height of the GaAs quantum wires 16 and the period of the superlattice layer 7 can be controlled with the accuracy of single atom layer. |
| 公开日期 | 1990-05-10 |
| 申请日期 | 1988-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67401]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | NAGANUMA MITSURU,MIKAMI OSAMU,NOJIMA SHUNJI. Superlattice element and manufacture thereof. JP1990122682A. 1990-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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