Photovolatically growing method
文献类型：专利
| 作者 | YAMAGUCHI AKIO |
| 发表日期 | 1987-01-27 |
| 专利号 | JP1987018709A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photovolatically growing method |
| 英文摘要 | PURPOSE:To enable selectively the production of a fine structure by disposing a substrate in a vacuum chamber, and selectively producing a substance to be produced from a raw gas by the heat of the substrate and the emission of an optical interference pattern to the substrate on the substrate. CONSTITUTION:A substrate 11 is disposed in a vacuum chamber 12, and regulated at the prescribed position. Then, the chamber 12 is exhausted, the substrate 11 is heated to remove surface absorption gas, and the entire surface is cleaned by sputtering with Ar ion gas. Then, raw gas 13 is fed to the chamber 12, and the substrate 11 is emitted by an entire surface emitting system. An InP buffer layer 11a produced from the gas 13 without surface contamination is formed on the entire substrate 11 by this operation. Then, the layer 11a is emitted by an interference pattern system. In this case, the pitch of an interference moire 14 is set to the prescribed value. This operation is repeated to form by epitaxially growing the desired corrugated lattice 5a made of InP on the layer 11a. The thus formed lattice 5a has a lattice pitch of the interference moire 14 and a sectional shape of sinusoidal wave shape. |
| 公开日期 | 1987-01-27 |
| 申请日期 | 1985-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67406]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIO. Photovolatically growing method. JP1987018709A. 1987-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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