Laser diode with metal-oxide upper cladding layer
文献类型：专利
| 作者 | KNEISSL, MICHAEL A.; ROMANO, LINDA T.; VAN DE WALLE, CHRISTIAN G. |
| 发表日期 | 2004-09-23 |
| 专利号 | US20040184497A1 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode with metal-oxide upper cladding layer |
| 英文摘要 | A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiO2 isolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region. |
| 公开日期 | 2004-09-23 |
| 申请日期 | 2003-03-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67409]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | KNEISSL, MICHAEL A.,ROMANO, LINDA T.,VAN DE WALLE, CHRISTIAN G.. Laser diode with metal-oxide upper cladding layer. US20040184497A1. 2004-09-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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