Manufacture of edge luminescent light emitting diode
文献类型：专利
| 作者 | KAWAHARA MASATO; OGAWA HIROSHI; OSHIBA SAEKO; KOBAYASHI MASAO |
| 发表日期 | 1987-12-14 |
| 专利号 | JP1987287674A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of edge luminescent light emitting diode |
| 英文摘要 | PURPOSE:To reduce the length of a current concentration part with high accuracy, and improve the luminous efficiency, by a method wherein a plurality of strap-shaped current concentration parts are formed, which are successively subjected to a cleavage process, the current concentration part whose length error is smallest is selected, and thence a light emitting diode is obtained. CONSTITUTION:Firstly, as usual, an N-InP layer, an InGaAsP active layer, a P-InP layer and a P-InGaAsP layer are grown in order on an N-InP substrate by an epitaxy, after that, an AuZn electrode is deposited. Then shallow scratches are formed with a diamond point and the like on a light emitting diode element corresponding to a position shown by a broken line 21, and the light emitting diode element is subjected to a cleavage process to be divided into two parts. In this process the cleavage is performed at a position corresponding to the centered broken line 21 of an etching mask 20 wherein (n) mask patterns 20a-1-20a-n are shifted by DELTAL/(n-1). The current concentration part is formed applying the etching mask 20 mentioned above, so that the length L can be reduced with high accuracy and excellent yield, and a diode having a high luminous efficiency can be obtained. |
| 公开日期 | 1987-12-14 |
| 申请日期 | 1986-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67418]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KAWAHARA MASATO,OGAWA HIROSHI,OSHIBA SAEKO,et al. Manufacture of edge luminescent light emitting diode. JP1987287674A. 1987-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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