Reflecting type variable wavelength semiconductor laser
文献类型：专利
| 作者 | INOUE NAOHISA; MORI KAZUHIKO; MATANO MASAHARU; YAMASHITA MAKI |
| 发表日期 | 1983-06-07 |
| 专利号 | JP1983095886A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Reflecting type variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To perform stable single longitudinal oscillation and to vary the oscillating wavelength, by varying a voltage which is applied across a pair of electrodes on a reflecting film comprising a material having electrooptical effect, which is arranged on one surface constituting a resonator for the semiconductor laser. CONSTITUTION:On the semiconductor laser, e.g. n-GaAs single crystal substrate 1 of a double heterostructured laser diode, an n-Ga1-xAlxAs layer 2, a p-GaAs layer 3, a P-Ga1-xAlxAs layer 4, and a p-GaAs layer 5 are grown by using a liquid phase epitaxial technology. The reflecting film 10 made of a material having large electrooptical constant such as BaTiO3 is formed on an end surface 8 by sputtering, and a pair of electrodes 11 are provided on the reflecting film 10. By varying the voltage across said electrodes 11, the oscillating wavelength of the semiconductor laser can be varied. The reflecting type variable wavelength semiconductor laser obtained in this way can be effectively applied to wavelength multiplexed communications. |
| 公开日期 | 1983-06-07 |
| 申请日期 | 1981-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67426]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | INOUE NAOHISA,MORI KAZUHIKO,MATANO MASAHARU,et al. Reflecting type variable wavelength semiconductor laser. JP1983095886A. 1983-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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