Semiconductor laser of long resonator length
文献类型:专利
作者 | SAKAI KAZUO; MATSUSHIMA YUICHI; UKO KATSUYUKI; AKIBA SHIGEYUKI |
发表日期 | 1989-01-12 |
专利号 | JP1989009679A |
著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser of long resonator length |
英文摘要 | PURPOSE:To obtain a semiconductor laser, which has a narrow line width, oscillates in a single wavelength and has a long resonator length, by a method wherein optical waveguides consist of a plurality of optical waveguides and the optical waveguides are optically coupled to one another in such a way that they are equivalently regarded as one optical waveguide. CONSTITUTION:When a forward current is caused to flow between electrodes 8 and 9, lights luminesce in an active layer 3 and the luminesced lights pass through an optical waveguide layer 7 and reach to a Bragg reflection region 13 while being reflected in m1-m3. In this place, a periodical roughness is formed in close proximity to the layer 7 and the light only of a specified wavelength is reflected. The lights which are not reflected are emitted outside through an (mb) or are prevented from returning to former optical waveguides 14 by absorption and so on. In such a way, an optical waveguide region 12 is formed in such a way that the waveguides 14 are apparently arranged between the regions 11 and 13 in a 'W' shape and become equivalently one optical waveguide 14. Accordingly, the laser of this constitution can be formed into a semiconductor laser, wherein the interval between the cleavage plane (m0) of the region 11 and the cleavage plane (mR) of the region 13 is very apart and which has a long resonator length. |
公开日期 | 1989-01-12 |
申请日期 | 1987-07-02 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/67430] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
推荐引用方式 GB/T 7714 | SAKAI KAZUO,MATSUSHIMA YUICHI,UKO KATSUYUKI,et al. Semiconductor laser of long resonator length. JP1989009679A. 1989-01-12. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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