Visible radiation semiconductor laser
文献类型：专利
| 作者 | FUJII HIROAKI |
| 发表日期 | 1992-02-27 |
| 专利号 | JP1992062883A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible radiation semiconductor laser |
| 英文摘要 | PURPOSE:To reduce an element formation of an AlGaInP visible radiation semiconductor laser and to improve heat dissipation characteristics during high output operation by making a conductivity type of a substrate of a semiconductor laser P-type, where a side of a mesa and a part excepting the mesa are coated with a semiconductor layer of the same conductivity as the substrate. CONSTITUTION:A semiconductor laser is formed through three times of metal organic thermal decomposition vapor growth method and mesa processing process. That is, a P-type GaInP layer 150, a P-type AlGaInP clad layer 120, an undoped GaInP active layer 110, an N-type AlGaInP clad layer 130, an N-type GaInP ethcing stopper layer 160, an N-type A GaInP clad layer 140, an N-type GaInP layer 170, and an N-type GaAs cap layer 190 are formed by crystal growth in this order to form a double hetero structure wafer. Then, the N-type AlGaInP 140 is processed to a mesa shape to form a laser structure. In the second crystal growth, a current block layer 180 which consists of P-type GaAs is formed by crystal growth in a side of the mesa and a part excepting the mesa. An N-type GaAs cap layer 200 is formed all over in the third crystal growth and electrodes are performed on both surfaces of an element. |
| 公开日期 | 1992-02-27 |
| 申请日期 | 1990-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67436]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FUJII HIROAKI. Visible radiation semiconductor laser. JP1992062883A. 1992-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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