Plane light emission type semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | YAMAZOE YOSHIMITSU; OKUDA HIROSHI |
| 发表日期 | 1983-12-24 |
| 专利号 | JP1983223394A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Plane light emission type semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To improve the performance of a plane light emission type semiconductor laser by providing a plurality of active regions along the transmission passage of laser light. CONSTITUTION:A plurality of the active layer 5 and 5' are provided on a semiconductor substrate 2, along the transmission passage of laser light, at a distance each other. These active layers 5 and 5' have the same forbidden band gap. The active region 12 of the active layer 5 acts as a modulating active region, and the active region 13 of the active layer 5' acts as a laser light amplifying active region. Such a formation increases the active regions along the direction of laser light transmission and decreases the threshold value of laser light emission. Besides, the decrease of performance and the failure of the laser devide due to thermal deterioration can be avoided. Further, the direct modulation of the laser light can be easily performed. Thus, the performance of the plane light emission type semiconductor laser can be improved. |
| 公开日期 | 1983-12-24 |
| 申请日期 | 1982-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67437]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | YAMAZOE YOSHIMITSU,OKUDA HIROSHI. Plane light emission type semiconductor laser device and manufacture thereof. JP1983223394A. 1983-12-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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