Semiconductor laser diode and method of fabricating the same
文献类型：专利
| 作者 | KWAK, JOON-SEOP; CHOI, KWANG-KI; HA, KYOUNG-HO; KIM, YEON-HEE; SHIM, JONG-IN |
| 发表日期 | 2006-05-25 |
| 专利号 | US20060109881A1 |
| 著作权人 | SAMSUNG ELECTRO_MECHANICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode and method of fabricating the same |
| 英文摘要 | A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer. |
| 公开日期 | 2006-05-25 |
| 申请日期 | 2005-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67439]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRO_MECHANICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KWAK, JOON-SEOP,CHOI, KWANG-KI,HA, KYOUNG-HO,et al. Semiconductor laser diode and method of fabricating the same. US20060109881A1. 2006-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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