Visible light surface emitting laser device
文献类型：专利
| 作者 | ARIMOTO, SATOSHI, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1992-06-03 |
| 专利号 | EP0488510A2 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light surface emitting laser device |
| 英文摘要 | A visible light surface emitting laser device includes a GaAs substrate (1) having a (100) oriented surface as a main surface; a double heterojunction structure including at least an AlGaInP first cladding layer (2), an undoped GaInP active layer (4) epitaxially grown on the first cladding layer (2) under such a condition that natural superlattice will be formed, and an AlGaInP second cladding layer (5) formed on the active layer (4) and having opposite conductivity type to that of the first cladding layer (2); a groove (18) penetrating the substrate (1); and regions (7) formed by performing diffusion of impurities having opposite conductivity type to that of the second cladding layer (5) into regions other than a region opposite to the groove (18) from the second cladding layer (5) side so as not to reach the first cladding layer (2), in which the natural superlattice is disordered (8). Therefore, a current confinement structure and a light confinement structure can be realized in the active layer. As a result, a visible light surface emitting laser device that oscillates at low threshold current and that controls the transverse mode can be realized. |
| 公开日期 | 1992-06-03 |
| 申请日期 | 1991-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67456]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ARIMOTO, SATOSHI, C/O MITSUBISHI DENKI K.K.. Visible light surface emitting laser device. EP0488510A2. 1992-06-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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