Semiconductor lasers utilizing optimized n-side and p-side junctions
文献类型：专利
| 作者 | FARMER, JASON NATHANIEL; DEVITO, MARK ANDREW; HUANG, ZHE; CRUMP, PAUL ANDREW; GRIMSHAW, MICHAEL PETER; THIAGARAJAN, PRABHURAM; DONG, WEIMIN; WANG, JUN |
| 发表日期 | 2009-07-02 |
| 专利号 | US20090168826A1 |
| 著作权人 | NLIGHT PHOTONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor lasers utilizing optimized n-side and p-side junctions |
| 英文摘要 | A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio. |
| 公开日期 | 2009-07-02 |
| 申请日期 | 2008-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67466]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NLIGHT PHOTONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | FARMER, JASON NATHANIEL,DEVITO, MARK ANDREW,HUANG, ZHE,et al. Semiconductor lasers utilizing optimized n-side and p-side junctions. US20090168826A1. 2009-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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