Surface emission laser
文献类型：专利
| 作者 | SEKIGUCHI YOSHINOBU |
| 发表日期 | 1989-10-24 |
| 专利号 | JP1989266779A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emission laser |
| 英文摘要 | PURPOSE:To eliminate a process for etching a substrate selectively and improve the yield of manufacture of devices by a method wherein a distributed reflection type mirror is provided between an active layer and the substrate and a light generated in the active layer is outputted to the direction opposite to the substrate. CONSTITUTION:A distributed reflection type mirror 7 composed of a semiconductor super-lattice is provided between an active layer 6 and a substrate 10; further, a current blocking region 8 to constrict a driving current is provided in one of semiconductor layers from the active layer 6 through the substrate 10. Therefore, the driving current produced by applying a forward bias voltage between a P-type electrode 1 and an n-type electrode 11 flows from the electrode 1 to the electrode 11 through an active region 5 in the active layer 6 and a current injection window 9, and light generated in the active layer 6 is outputted to the direction of the electrode 1 after it is amplified by the distributed reflection type mirror 7 and a dielectric multilayer film mirror 2. With this constitution, etching of the substrate 10 can be dispensed with and the yield can be improved. |
| 公开日期 | 1989-10-24 |
| 申请日期 | 1988-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | SEKIGUCHI YOSHINOBU. Surface emission laser. JP1989266779A. 1989-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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