Mounting structure of compound semiconductor element
文献类型：专利
| 作者 | MEGURO MASAO; HANEDA MAKOTO; SAKAKI SHIGEO |
| 发表日期 | 1983-03-29 |
| 专利号 | JP1983052892A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Mounting structure of compound semiconductor element |
| 英文摘要 | PURPOSE:To lengthen the life of a compound semiconductor laser element, and to stabilize operation by forming a sub-mount by a metal, the quality of material thereof is the same as a semiconductor element or a thermal expansion coefficient thereof is close to that of the semiconductor element. CONSTITUTION:The mounting structure of a semiconductor laser element is manufactured in such a manner that a solder board 18, a sub-mount 4 and a chip 1 are stacked onto a stem 2 in succession and mutually fixed by applying heat. The stem 2 consists of a copper plate 20, the surface thereof is coated with a gold plated film 19. The sub- mount 4 employs an Mo plate 21 having the thermal expansion coefficient of 3.7-5.3X 10/ deg.C close to the 4.5X10/ deg.C thermal expansion coefficient of the InP as the base material because the chip 1 consists of the quality of material of an InP group. Cr layers 13 with the thickness of approximately 0.1-5mum, Sn layens 14, Au-Sn layers 15 and Sn layers 16 are stacked and formed to the upper and lower surfaces of the Mo plate 2 The chip 1 is the semiconductor laser element obtained by shaping layers composed of InGaAsP in succession while using InP as a base material in desired conduction type, and the lower layer has a Cr layer 10 and an Au layer 1 Each member is heated and welded successively or simultaneously, and laser beams 17 are projected from the projecting surface of the chip |
| 公开日期 | 1983-03-29 |
| 申请日期 | 1981-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67478]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | MEGURO MASAO,HANEDA MAKOTO,SAKAKI SHIGEO. Mounting structure of compound semiconductor element. JP1983052892A. 1983-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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