Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces
文献类型：专利
| 作者 | AKINAGA, FUJIO; FUKUNAGA, TOSHIAKI |
| 发表日期 | 2005-03-03 |
| 专利号 | US20050047463A1 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces |
| 英文摘要 | In a semiconductor laser element: a lower cladding layer of a first conductive type, a lower optical waveguide layer made of In0.49Ga0.51P which is undoped or the first conductive type, an active layer made of Inx3Ga1-x3As1-y3Py3 lattice-matching with GaAs (0 |
| 公开日期 | 2005-03-03 |
| 申请日期 | 2003-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67483]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | AKINAGA, FUJIO,FUKUNAGA, TOSHIAKI. Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces. US20050047463A1. 2005-03-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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