Gan-based semiconductor laser device
文献类型：专利
| 作者 | KAWAKAMI, TOSHIYUKI; YAMASAKI, YUKIO; ONO, TOMOKI; ITO, SHIGETOSHI; OMI, SUSUMU |
| 发表日期 | 2004-12-09 |
| 专利号 | US20040245537A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Gan-based semiconductor laser device |
| 英文摘要 | According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer (106), and a stripe-shaped waveguide for guiding light generated in the active layer. At least one pair of light-absorbing films (112) are provided in at least local regions on the opposite sides of the stripe-shaped waveguide, to reach a distance within 0.3 mum from the waveguide. According to another aspect of the present invention, a GaN-based semiconductor laser device includes first conductivity type semiconductor layers (103-105), a semiconductor active layer (106) and second conductivity type semiconductor layers (107-110) stacked sequentially. The laser device further includes a ridge stripe (111) provided to cause a refractive index difference for confinement of light in a lateral direction crossing a longitudinal direction of a cavity, and a current-introducing window portion (114) provided on the ridge stripe. The current-introducing window portion (114) includes a narrow portion that is locally narrowed compared to the width of the ridge stripe (111). |
| 公开日期 | 2004-12-09 |
| 申请日期 | 2002-07-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67491]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWAKAMI, TOSHIYUKI,YAMASAKI, YUKIO,ONO, TOMOKI,et al. Gan-based semiconductor laser device. US20040245537A1. 2004-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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