Multi-wavelength light-emitting element
文献类型：专利
| 作者 | SANADA TATSUYUKI |
| 发表日期 | 1986-12-06 |
| 专利号 | JP1986276286A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-wavelength light-emitting element |
| 英文摘要 | PURPOSE:To operate a plurality of oscillation wavelengths by one light-emitting element as if separate laser element were used by forming the energy gap of an active layer by a semiconductor layer having an energy gap smaller than upper and lower adjacent clad layers at all times. CONSTITUTION:Three layers of high-resistance AlGaAs clad layers 12 are laminated onto a semi-insulating GaAs substrate 11 while holding N-type AlxGa1-xAs active layers 13, 14 and a contact layer 15 consisting of a semi- insulating GaAs layer. A P-type impurity is introduced while using ZnAs as a thermal-diffusion source by employing a mask composed of an insulating film 19, etc. opened to the upper surface of the layer 15 to shape a region 16, and the ZnAs source is removed, and a drive-in region 17 is formed through thermal treatment at the same temperature. The active layers 13, 14 are exposed to a stepped shape through mesa etching, and electrodes are shaped. A P-type contact electrode 6 is formed through evaporation in order of Au, Zn and Au, and the N-type contact electrodes 7 are shaped through evaporation of AuGe and Au, and a multi-wavelength light-emitting element is formed through an alloying process. |
| 公开日期 | 1986-12-06 |
| 申请日期 | 1985-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67494]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SANADA TATSUYUKI. Multi-wavelength light-emitting element. JP1986276286A. 1986-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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