Manufacture of semiconductor optical integrated element
文献类型：专利
| 作者 | MURATA SHIGERU |
| 发表日期 | 1990-07-10 |
| 专利号 | JP1990177384A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor optical integrated element |
| 英文摘要 | PURPOSE:To enhance the optical coupling efficiency of an active region with a light guide region by a method wherein part of a multilayer structure, which is formed on a semiconductor substrate and comprises an active layer, is removed and a light guide layer is formed on the whole surface of the semiconductor substrate. CONSTITUTION:A buffer layer 120, an active layer 130 and a clad layer 140 are grown on a semiconductor substrate 110. Next, part of a part, which is used as a light guide region 200, is selectively removed up to the layer 130 to form a striped recessed part 500 of a width W. Subsequently, a light guide layer 150 having a forbidden band width larger than that of the layer 130 and a clad layer 160 are grown in order on the whole substrate 110 to fill the recessed part 500. Thereby, a semiconductor optical integrated element, in which the optical coupling efficiency of an active region 110 with the region 200 is high and moreover, the thickness only of the layer 150 at the region 200 is comparatively thick, can be manufactured. |
| 公开日期 | 1990-07-10 |
| 申请日期 | 1988-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67495]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MURATA SHIGERU. Manufacture of semiconductor optical integrated element. JP1990177384A. 1990-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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