Distributed feedback type plane light emitting semiconductor laser
文献类型：专利
| 作者 | IGA KENICHI; UCHIYAMA SEIJI; KOKUBU YASUO |
| 发表日期 | 1985-01-19 |
| 专利号 | JP1985010685A |
| 著作权人 | TOUKIYOU KOGYO DAIGAKU |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type plane light emitting semiconductor laser |
| 英文摘要 | PURPOSE:To enable to planely emit a strong light by distributed feedback resonance of single vertical mode by alternately laminating active semiconductor layers and p-m junction semiconductor layers in different combinations of III Group elements and V Group elements. CONSTITUTION:Active semiconductor layers 10 formed in combinations of crystal growing III Group elements and V Group elements in an active region by the concentration of carrier for emitting a light, and P type and N type semiconductor layers 50, 60 similarly formed in combination of crystal growing III Group elements and V Group elements for flowing a current to both ends of a semiconductor device of a multilayer structure laminated in multistage of p-m junction layers 50, 60 contributing to the implantation of a current are formed on a semiconductor. A thin metal electrode layer which operates as a reflecting mirror is formed on both ends of a transparent semiconductor device of such a structure, a voltage is applied, thereby producing a single vertical mode light emission resonated with the periodic variation with the refractive index and light amplifying gain by the alternately laminated active semiconductor layers and the P-N junction semiconductor layers. |
| 公开日期 | 1985-01-19 |
| 申请日期 | 1983-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67526]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOUKIYOU KOGYO DAIGAKU |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,UCHIYAMA SEIJI,KOKUBU YASUO. Distributed feedback type plane light emitting semiconductor laser. JP1985010685A. 1985-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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