High-resistance semiconductor layer buried type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KOIZUMI YOSHIHIRO |
| 发表日期 | 1990-08-15 |
| 专利号 | JP1990206192A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High-resistance semiconductor layer buried type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a low-threshold current and high external differentiated quantum efficiency from the title laser by constituting the active area of the device of two layers of a resistant semiconductor layer and n-type semiconductor layer and separating a p-type clad layer from a high-resistance semiconductor layer so that no contacting part can exist between the p-type clad layer and high-resistance semiconductor layer. CONSTITUTION:At least a stripe-like active area containing an active layer 18 and current blocking layers provided on both sides of the active area are provided and each of the current blocking layers is composed of two layers of a high-resistance semiconductor layers 12 having a deep level at which electrons are caught and an n-type semiconductor layer 13. In addition, a p-type clad layer 14 is separated from the layer 12 by means of the layer 13 so that no contacting part can exist between the layers 14 and 12. As a result, occurrence of a leak current hardly takes place and an applied current is effectively converted into light at the active layer. Therefore, a low-threshold current and high external differentiated quantum efficiency 6, etc., can be expected. |
| 公开日期 | 1990-08-15 |
| 申请日期 | 1989-02-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67528]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KOIZUMI YOSHIHIRO. High-resistance semiconductor layer buried type semiconductor laser and manufacture thereof. JP1990206192A. 1990-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。