Fabrication process for semiconductor optical device
文献类型：专利
| 作者 | SAKATA, YASUTAKA, C/O NEC CORPORATION |
| 发表日期 | 1995-11-02 |
| 专利号 | EP0680119A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Fabrication process for semiconductor optical device |
| 英文摘要 | A SiO₂ mask (102) is formed on an n-type InP substrate. The mask gap width is narrower in a region I (laser region) and wider in a region II (modulator region). With taking the mask as growth blocking masks, an optical guide layer of InGaAsP, an MQW active layer of InGaAs well layer and InGaAsP barrier layer, p-type InP layer are selectively grown. By removing a part of the mask, p-type InP clad layer and p-type InGaAs cap layer are formed. By this, regions having mutually different bandgap can be formed through one selective growth process. Also, it becomes possible to form the regions having large bandgap difference while avoiding lattice mismatching. |
| 公开日期 | 1995-11-02 |
| 申请日期 | 1995-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67529]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SAKATA, YASUTAKA, C/O NEC CORPORATION. Fabrication process for semiconductor optical device. EP0680119A1. 1995-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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