Superlattice laser equipped with external modulator
文献类型：专利
| 作者 | FURUYA AKIRA; MAKIUCHI MASAO; WADA OSAMU |
| 发表日期 | 1989-03-17 |
| 专利号 | JP1989073688A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Superlattice laser equipped with external modulator |
| 英文摘要 | PURPOSE:To realize integration by making a wavelength longer than a PL of a modulator by a method wherein a forbidden bandwidth of a quantum well at a modulator part is formed to be larger than that at a laser part and an exciton absorption wavelength of the quantum well at the modulator part is made to be shorter than or equal to an oscillation wavelength of a laser. CONSTITUTION:An N-Al0.3Ca0.7As clad layer 2, an MQW (multiple quantum welI) active layer 3, a p-Al0.3Ga0.7As clad layer 4, a p-GaAs contact layer 5 are grown in succession on an N GaAs substrate 1; a layer structure is formed. Then, a separation groove 6 is formed; p-side electrodes 71, 72 are formed on the p-GaAs contact layer 5 divided into two parts of a laser region and a modulator region; an n-side electrode 8 is formed on the rear of the N GaAs substrate Here, a forbidden band width of a laser is smaller than that of a modulator. A passivating effect by a pressure of arsenic acts remarkably in a region on which the pressure of arsenic is impressed directly; a PL of an MOQ can be maintained at about 830nm. On the other hand, the PL of the MQW is shifted to about 820nm in a region under a passivating film due to this heat treatment. That is to say, forbidden band widths E1, E2 of the MQW in the laser region and the modulator become 830nm and 280nm respectively, in terms of wavelengths. |
| 公开日期 | 1989-03-17 |
| 申请日期 | 1987-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67535]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUYA AKIRA,MAKIUCHI MASAO,WADA OSAMU. Superlattice laser equipped with external modulator. JP1989073688A. 1989-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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