Manufacture of buried hetero structure semiconductor light emitting element
文献类型：专利
| 作者 | JINDOU MASAAKI |
| 发表日期 | 1984-10-15 |
| 专利号 | JP1984181080A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried hetero structure semiconductor light emitting element |
| 英文摘要 | PURPOSE:To perform a current narrowing to a mesa laminate which conveniently includes an active layer by reduce the resistance a high resistance layer on a mesa laminate by impurity diffusion from a semiconductor layer formed in contact with a high resistance layer. CONSTITUTION:An n type AlGaAs layer 2, an AlGaAs active layer 3, a P type AlGaAs layer 4 and a P type GaAs layer 5 are formed by epitaxial growth on an N type GaAs substrate Then, selective etching is performed to form a mesa laminate. Then, a high resistance AlGaAs layer 6 and a P type GaAs layer 10 are formed by second epitaxial growth. In this case, the current narrowing to the mesa laminate can be performed. Further, since the step of etching to remove the high resistance layer is not included, the yield can be improved. |
| 公开日期 | 1984-10-15 |
| 申请日期 | 1983-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67547]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | JINDOU MASAAKI. Manufacture of buried hetero structure semiconductor light emitting element. JP1984181080A. 1984-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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