Formation of electrode
文献类型：专利
| 作者 | SASAKI TATSUYA; INAI MOTOHIKO |
| 发表日期 | 1987-12-08 |
| 专利号 | JP1987282480A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of electrode |
| 英文摘要 | PURPOSE:To form a platinum stripe electrode to enable continuous oscillation at a high temperature, and to enhance the characteristic of an element by a method wherein after a part of a dierectric film is removed in a stripe type to expose the surface of a semiconductor, platinum is evaporated on the whole surface, alloying treatment is performed, and then a platinum layer on the dielectric film is removed. CONSTITUTION:A clad layer 6, an active layer 5, a clad layer 4 and a cap layer 3 are grown in order on a substrate 7, an SiO2 oxide film is laminated thereon, and photolithography is performed using a mask to form stripe type grooves. The wafer and ZnP2, ZnAs2, InP are put in a quartz ampoule to be sealed in a vacuum, Zn is diffused up to the middle of the p-type clad layer 4, and the SiO2 film is removed. An SiO2 film is adhered again, stripe type grooves of two pieces are formed performing positioning of a mask, and mesa etching is performed using a Br2-CH3OH solution. Then an SiO2 film 10 is adhered again, positioning of a mask is performed, and stripes are formed. Pt is evaporated thereon, and after alloying is performed, the platinum layer on the dielectric film is removed. |
| 公开日期 | 1987-12-08 |
| 申请日期 | 1986-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67549]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SASAKI TATSUYA,INAI MOTOHIKO. Formation of electrode. JP1987282480A. 1987-12-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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