Formation of grating
文献类型：专利
| 作者 | HASE NOBUYASU; OSHIMA MASAAKI; TAKEUCHI YOSHINORI |
| 发表日期 | 1988-12-06 |
| 专利号 | JP1988299387A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of grating |
| 英文摘要 | PURPOSE:To enable the depth control of each layer at the thickness level by forming a grating pattern on an InP/InGaAsP superlattice, and sequentially etching each layer by the selective etching of InP and InGaAsP. CONSTITUTION:On an InP single crystal 1, an epitaxial layer is formed wherein InGaAsP 2a and InP 2b in lattice matching with The InP are alternately stacked. A resist 4 is uniformly and thinly applied on the upper surface of an InGaAsP/InP superlattice 2, and after forming a grating pattern on the resist 4, the resist 4 is removed. The superlattice 2 is etched with an etchant of H2SO4:H2O2:H2O=3:1:1 for the InGaAsP 2a and with HCL for the InP 2b, sequentially and alternately to a predetermined depth. With this, the depth control of each layer at the thickness level is made possible. |
| 公开日期 | 1988-12-06 |
| 申请日期 | 1987-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67554]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASE NOBUYASU,OSHIMA MASAAKI,TAKEUCHI YOSHINORI. Formation of grating. JP1988299387A. 1988-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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