Edge transparence type semiconductor laser
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; YOSHIZAWA MISUZU; KAJIMURA TAKASHI |
| 发表日期 | 1991-03-27 |
| 专利号 | JP1991071686A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Edge transparence type semiconductor laser |
| 英文摘要 | PURPOSE:To enable the formation of a waveguide and the edge transparency by the same crystal growth process by a method wherein a groove is made to reach to an active layer at an element end, and the active layer is removed. CONSTITUTION:A clad layer 2, a guide layer 3, an active layer 4, a clad layer 5, a P-Al0.3Ga0.7As layer 6, a block layer 7, and an N-P-Al0.2Ga0.8As layer 8 are successively formed on an N-GaAs substrate Then, these layers are etched as far as a halfway point of the N-GaAs block layer 7, and a semiconductor located in an element forming region is removed as far as the active layer 4. The etching concerned can precisely controlled by using an etching solution together. Next, a selective etching is carried out to remove the N-GaAs block layer 7 in a central element region, and moreover a P-Al0.5Ga0.5As layer 9 and a P-GaAs layer 10 are formed again to constitute a laser structure. By this setup, an edge transparence type laser can be formed through a crystal growth process executed only twice in the same process as a self-alignment type laser. |
| 公开日期 | 1991-03-27 |
| 申请日期 | 1989-08-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67563]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,YOSHIZAWA MISUZU,KAJIMURA TAKASHI. Edge transparence type semiconductor laser. JP1991071686A. 1991-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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