Nitride based semiconductor laser device and method of fabricating the same
文献类型：专利
| 作者 | GOTO, TAKENORI |
| 发表日期 | 2002-01-03 |
| 专利号 | US20020001327A1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride based semiconductor laser device and method of fabricating the same |
| 英文摘要 | A semiconductor laser device is constructed by stacking an n-cladding layer, an n-optical guide layer, an MQW active layer, a p-cap layer, a p-optical guide layer, a p-cladding layer, an n-current blocking layer, and a p-contact layer in this order on one surface of a transparent substrate. A p electrode is formed on a predetermined region of the p-contact layer. An n electrode having a projected shape is formed on the other surface of the transparent substrate. In this case, a portion, where a projection of the n electrode is arranged, of the device corresponds to the front (a surface on the side of laser light emission) thereof. |
| 公开日期 | 2002-01-03 |
| 申请日期 | 2001-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67577]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | GOTO, TAKENORI. Nitride based semiconductor laser device and method of fabricating the same. US20020001327A1. 2002-01-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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