Structure and method for index-guided buried heterostructure AlGalnN laser diodes
文献类型：专利
| 作者 | BOUR, DAVID P.; KNEISSL, MICHAEL A.; ROMANO, LINDA T. |
| 发表日期 | 2002-07-18 |
| 专利号 | US20020094003A1 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure and method for index-guided buried heterostructure AlGalnN laser diodes |
| 英文摘要 | An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. |
| 公开日期 | 2002-07-18 |
| 申请日期 | 2001-12-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67578]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,KNEISSL, MICHAEL A.,ROMANO, LINDA T.. Structure and method for index-guided buried heterostructure AlGalnN laser diodes. US20020094003A1. 2002-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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