A semiconductor laser structure
文献类型：专利
| 作者 | YEE LOY LAM |
| 发表日期 | 2003-08-20 |
| 专利号 | GB2385462A |
| 著作权人 | DENSELIGHT SEMICONDUCTORS PTE LTD |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor laser structure |
| 英文摘要 | A semiconductor waveguide having a rib structure for use in a laser diode device, comprising a metal contact layer deposited over the rib structure and dielectric layer interposed between the side walls of the rib structure and the metal contact layer. The layered rib structure enhances electrical confinement in the device, while the dielectric layer serves both as a passivation layer to protect the exposed rib sidewall and as a thermal dissipation means conducting heat away from the active lasing region to the metal contact layer. In a second embodiment, a thin intrinsic InP layer is regrown on the sidewalls and base of the rib (fig. 6), which allows reduction of surface recombination leakage current. |
| 公开日期 | 2003-08-20 |
| 申请日期 | 2002-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67580]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | DENSELIGHT SEMICONDUCTORS PTE LTD |
| 推荐引用方式 GB/T 7714 | YEE LOY LAM. A semiconductor laser structure. GB2385462A. 2003-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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