Semiconductor optical modulator
文献类型：专利
| 作者 | SEKIGUCHI YOSHINOBU |
| 发表日期 | 1992-03-23 |
| 专利号 | JP1992088322A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical modulator |
| 英文摘要 | PURPOSE:To significantly change refractive index by forming barrier layers to such a thickness and shape at which the coupling state between quantum wells can be changed by the voltage to be impressed to waveguides. CONSTITUTION:The semiconductor optical waveguides 10 including the barrier layers 5b between >=2 layers of the quantum wells 5a and means for impressing the voltage to at least a part of the optical waveguides 10 are provided. The barrier layers 5b are formed to such thickness and shape at which the coupling state between the quantum wells can be changed by the voltage to be impressed to the optical waveguides 10. Then, an electric field is impressed to the relatively thick barrier layers of the superlattice structure to change the potential distribution therein, by which the height and shape of the barrier layers are effectively changed and the coupling state between the quantum well is eventually changed. Consequently, the refractive index of the superlattice structure is largely changed. The refractive index of the semiconductor optical waveguides of the superlattice structure in the region impressed with the voltage is significantly changed in this way. |
| 公开日期 | 1992-03-23 |
| 申请日期 | 1990-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67583]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | SEKIGUCHI YOSHINOBU. Semiconductor optical modulator. JP1992088322A. 1992-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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