Single axial mode semiconductor laser device
文献类型：专利
| 作者 | YAMAGUCHI MASAYUKI; MITO IKUO |
| 发表日期 | 1985-10-17 |
| 专利号 | JP1985206188A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single axial mode semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the extension of oscillation spectral line width even on modulation at high speed while extremely reducing optical coupling loss by forming a laser region width an active layer and a diffraction grating, an optical waveguide layer and a modulation region and mounting a reflection inhibiting mechanism for beams to a projecting end surface. CONSTITUTION:A diffraction grating 16 is formed in a laser region 17 on an InP substrate 11, and an InGaAsP optical confinement layer 12, an InGaAsP active layer 13, an InP clad layer 14 and an InGaAsP cap layer 15 are shaped on the whole surface in succession. The laser region 17 functions as a distributed feedback type semiconductor laser, and oscillates at a single axial mode by injecting currents I The optical confinement layer 12 and the active layer 13 shaped in a modulation region 18 serve as an optical waveguide layer 113, and laser beams Pt are projected as an optical output P0 from an antireflection-coated end surface by an SiN film 112. Amplitude is modulated by currents I2 injected to the modulation region 18. |
| 公开日期 | 1985-10-17 |
| 申请日期 | 1984-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI MASAYUKI,MITO IKUO. Single axial mode semiconductor laser device. JP1985206188A. 1985-10-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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