Surface light emitting type luminous element
文献类型:专利
作者 | OKAZAKI HARUHIKO; SONE MINORU |
发表日期 | 1987-06-26 |
专利号 | JP1987143486A |
著作权人 | TOSHIBA CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Surface light emitting type luminous element |
英文摘要 | PURPOSE:To make it possible to monitor a signal light without attenuating the amount of light, by the epitaxial growth of a semiconductor layer on a surface to take out the light output of a surface light emitting type luminous element, said semiconductor layer having an energy gap larger than the active layer of the luminous element and being almost transparent at the wavelength of luminescent center. CONSTITUTION:A clad layer 2, an active layer 3, a clad layer 4 and a contact layer 5 are formed in order on one surface of a substrate An SiO2 film 6 and a P-side electrode 7 are formed on the layer 5. On the other surface of the substrate 1, that is, a surface to take out light, an N-side electrode and a layer 9 having a band gap wider than the active layer 3 are formed. After forming a lens for the layer 9, P-type impurity is diffused to form a Zn diffusion layer 10 and a P-side electrode 1 Thus a light receiving element is constituted of a semiconductor epitaxial layer 9 having the energy gap wider than the active layer 3, so that it is possible to monitor a signal light without attenuating the amount of the signal light at the near wavelength of a luminescent center. |
公开日期 | 1987-06-26 |
申请日期 | 1985-12-18 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/67594] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | TOSHIBA CORP |
推荐引用方式 GB/T 7714 | OKAZAKI HARUHIKO,SONE MINORU. Surface light emitting type luminous element. JP1987143486A. 1987-06-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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