Semiconductor substrate
文献类型：专利
| 作者 | KOMATSU HIROSHI |
| 发表日期 | 1989-03-02 |
| 专利号 | JP1989055890A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor substrate |
| 英文摘要 | PURPOSE:To simplify the manufacturing process and to make it possible to perform self-alignment, by providing a semiconductor substrate, wherein a II-VI compound semiconductor thin film is selectively formed on the side surface and lower surface of a step that is present on the surface, and coating the upper surface of said step with a mask. CONSTITUTION:A step is formed on the surface of a GaAs substrate 101 having a 100 surface orientation. The GaAs surface is exposed at a lower surface 102 of the step and at a side surface 103 of the step. An upper surface 104 of the step is coated with an SiO2 mask 105. In manufacturing of the step, at first, an SiO2 thin film is deposited on the GaAs substrate 101 by a thermal CVD method. Then, the SiO2 thin film at the part of the upper surface 104 of the step is made to remain, and the SiO2 thin film is etched away by a photoetching method. Finally, the remaining SiO2 thin film is used as an etching mask, and the GaAs substrate 101 is etched with sulfuric-acid based etching liquid to form a step. At this time, the GaAs surface is exposed at the lower surface 102 of the step and the side surface 103 of the step. |
| 公开日期 | 1989-03-02 |
| 申请日期 | 1987-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67599]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | KOMATSU HIROSHI. Semiconductor substrate. JP1989055890A. 1989-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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