Generation of semiconductor laser
文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1989-12-21 |
| 专利号 | JP1989316985A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Generation of semiconductor laser |
| 英文摘要 | PURPOSE:To decrease a leakage current so as to obtain a semiconductor laser capable of operating at a high speed by a method wherein a process is performed without exposing an active layer to air so as to prevent an n-growth layer from forming beside an active later region. CONSTITUTION:A mask pattern 13 is provided onto an n-type InP clad layer 10, an InGaAsP active layer 11, and a first P-type InP clad layer 12 which have been laminated, which is subjected to a laboratory etching and then a semi-insulating current blocking layer 14 is grown inside and over the etched groove. The pattern 13 is removed and a dielectric insulating film 16 pattern formed of SiO2 is provided in place of it, and a Zn doped second P-type clad layer 15 is grown until the upside of an element becomes even. Lastly, electrodes 17 and 18 are provided to both the front and rear of the element. By these processes, a leakage current can be decreased and a semiconductor laser operable at a high speed can be obtained. |
| 公开日期 | 1989-12-21 |
| 申请日期 | 1988-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67600]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. Generation of semiconductor laser. JP1989316985A. 1989-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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