Semiconductor Saturable Absorber Reflector and Method to Fabricate Thereof
文献类型：专利
| 作者 | OKHOTNIKOV, OLEG; GUINA, MIRCEA; GRUDININ, ANATOLY B. |
| 发表日期 | 2009-12-03 |
| 专利号 | US20090296767A1 |
| 著作权人 | REFLEKRON OY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor Saturable Absorber Reflector and Method to Fabricate Thereof |
| 英文摘要 | A design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. The absorption recovery time is controlled during the epitaxial growth by using lattice-mismatched layer(s) to induce dislocations, and implicitly non-radiative recombination centers within the nonlinear absorbing region. These lattice reformation layer(s) are interposed between the distributed Bragg reflector and the nonlinear absorption region, containing quantum-wells, quantum-dots or bulk semiconductor material. The thickness and composition of the lattice reformation layer(s) is an instrumental to control the amount of non-radiative recombination centers used to trap the optically excited carriers generated in the absorption region. |
| 公开日期 | 2009-12-03 |
| 申请日期 | 2005-04-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67616]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | REFLEKRON OY |
| 推荐引用方式 GB/T 7714 | OKHOTNIKOV, OLEG,GUINA, MIRCEA,GRUDININ, ANATOLY B.. Semiconductor Saturable Absorber Reflector and Method to Fabricate Thereof. US20090296767A1. 2009-12-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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