Method of forming electrode of semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZO |
| 发表日期 | 1989-06-29 |
| 专利号 | JP1989165192A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of forming electrode of semiconductor laser |
| 英文摘要 | PURPOSE:To increase the strength against wire bonding and decrease the fraction of defective, by forming a metal layer sticking well to an insulation film on an ohmic electrode and said insulation film, a gold layer on said metal layer, and a gold plated layer on said gold layer. CONSTITUTION:An insulation film 7 (SiO2) having a window 9 made just on a clad layer 4 is formed on a chip comprising a board 2 on which an active layer 3, the clad layer 4, and first and second buried layers 5 and 6 are formed. Forming a first electrode 1 (Au/Sn) and a second electrode 8 (Au/Zn) on the upper and lower surfaces of the chip and then eliminating the electrode 8 on the insulation film 7 form the electrode 8 only on the window portion 9. A Cr layer 11 and an Au layer 12 are formed on the upper surface of the chip in this order, photoresist 13 is applied to close the window 9, etched, and eliminated, and then an Au plating layer 14 is formed on the Au layer 12 to produce a wire bonding pad. This increases the adhesion of the SiO2 film 7, the Cr layer 11, and Au layer 12 and the strength against wire bonding. |
| 公开日期 | 1989-06-29 |
| 申请日期 | 1987-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67617]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZO. Method of forming electrode of semiconductor laser. JP1989165192A. 1989-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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