High efficiency intersubband semiconductor lasers
文献类型：专利
| 作者 | BOTEZ, DAN; XU, DAPENG, P.; MAWST, LUKE, J. |
| 发表日期 | 2017-03-29 |
| 专利号 | EP2002518A4 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | High efficiency intersubband semiconductor lasers |
| 英文摘要 | An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted. |
| 公开日期 | 2017-03-29 |
| 申请日期 | 2007-02-22 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67640]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN,XU, DAPENG, P.,MAWST, LUKE, J.. High efficiency intersubband semiconductor lasers. EP2002518A4. 2017-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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