Quantum structure semiconductor element
文献类型：专利
| 作者 | KITAMURA MITSUHIRO |
| 发表日期 | 1991-05-17 |
| 专利号 | JP1991116887A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum structure semiconductor element |
| 英文摘要 | PURPOSE:To make a quantum structure semiconductor element small in oscillating threshold current and to remarkably improve it in characteristics by a method wherein a first, a second, and a third semiconductor layer and a quantum fine wire or a quantum box are specified in energy gap. CONSTITUTION:An n-InGaAsP layer (first semiconductor layer) 2 is grown on an n-InP substrate 1, an InGaAs layer is formed into a quantum fine wires 3 through a selective etching process, and an InGaAsP layer (second semiconductor layer) 4 is selectively grown only on the part of the InGaAs layer which has been removed through etching. Lastly, a p-InGaAsP layer (third semiconductor layer) 5 and a p-InP clad layer 6 are successively grown, and thus a required quantum fine wire semiconductor laser is obtained through the burying growth and the formation of electrodes. Provided that the energy gaps of a first, a second, a third semiconductor layer, and a quantum fine wire or a quantum box are represented by Eg1, Eg2, Eg3, Egq respectively, they are so set as to satisfy inequalities, Eg2>Eg1>Egq and Eg2>Eg3>Egq. |
| 公开日期 | 1991-05-17 |
| 申请日期 | 1989-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67644]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO. Quantum structure semiconductor element. JP1991116887A. 1991-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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