Multiwavelength semiconductor laser element and driving method of that element
文献类型：专利
| 作者 | IKEDA SOTOMITSU |
| 发表日期 | 1992-09-02 |
| 专利号 | JP1992245494A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiwavelength semiconductor laser element and driving method of that element |
| 英文摘要 | PURPOSE:To widen the variable range of the wavelength of the title laser element by a method wherein the laser element is constituted into such a structure that resonators having resonator lengths of a plurality of different lengths are provided side by side into an array type in the lateral direction so as to oscillate the lights of wavelengths to correspond to the respective band gaps of a plurality of luminous layers and a current can be injected in each of the plurality of resonators independently of other resonators. CONSTITUTION:A plurality of luminous layers, the band gaps of a ground level of which are different from each other, an optical waveguide structure 4, which is provided between these luminous layers and comprises a barrier layer, and clad layers 3 and 5, which are laminated holding this structure 4 between them, are provided. Resonators of a plurality of different resonator lengths L1 and L2 are provided into an array type in the lateral direction using the same optical waveguide 4 so as to oscillate the lights of wavelengths to correspond to the respective band gaps of the plurality of luminous layers. The resonators are respectively provided with electrodes 7 and 8 so that a current can be injected in each resonator independently of other resonators. Thereby, light of a wide range of wavelength can be emitted. |
| 公开日期 | 1992-09-02 |
| 申请日期 | 1991-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67647]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | IKEDA SOTOMITSU. Multiwavelength semiconductor laser element and driving method of that element. JP1992245494A. 1992-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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