Forming method for diffraction grating
文献类型：专利
| 作者 | KANEIWA SHINJI; TAKIGUCHI HARUHISA; KUDO HIROAKI; YOSHIDA TOMOHIKO |
| 发表日期 | 1988-06-23 |
| 专利号 | JP1988150984A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Forming method for diffraction grating |
| 英文摘要 | PURPOSE:To obtain a diffraction grating having excellent diffraction efficiency by forming by a 2-luminous flux interference exposure method a periodic mask pattern on a semiconductor substrate, performing a first etching step, and executing second and third etching steps having directivity from different directions for etching the etched surface. CONSTITUTION:A semiconductor substrate is coated with a photoresist, and exposed by a normal 2-luminous flux interference exposure method to form a photoresist diffraction grating 2. With it as a mask an InGaP layer 1 is etched 3 with an etchant of saturated hydrogen bromide. Then, a second etching 4 having a directivity, such as a reactive ion etching is performed at 45 deg. with respect to the substrate perpendicularly to the grating. Further, a third etching 5 having a directivity is executed from a direction perpendicular to the second etching direction. The depth is the same as the second etching. Thus, the depth is regulated to drop the photoresist-adhered part, thereby forming a diffraction grating. In this case, since the resist part is dropped, the step of removing the resist can be eliminated. |
| 公开日期 | 1988-06-23 |
| 申请日期 | 1986-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67663]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KANEIWA SHINJI,TAKIGUCHI HARUHISA,KUDO HIROAKI,et al. Forming method for diffraction grating. JP1988150984A. 1988-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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