Formation of superlattice layer
文献类型：专利
| 作者 | SUGIURA HIDEO; YAMADA TAKESHI; IGA RYUZO |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992078129A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of superlattice layer |
| 英文摘要 | PURPOSE:To exclude unnecessary deposition of a polycrystalline layer of the same material as a well layer and a barrier layer, by a method wherein, when a superlattice layer is formed, the well layer and the barrier layer are formed by an organic metal molecular beam epitaxial growth method in the state that a specified temperature is applied to a semiconductor substrate. CONSTITUTION:A dielectric layer 2 is formed on the main surface la of a semiconductor substrate Next, a dielectric layer 2' is formed. Said layer has a plurality of windows 2a' stretching in a stripe type which make the main surface la of the semiconductor substrate 1 face the outside from the dielectric layer 2, and therefore has a plurality of stripe type dielectric layer parts 2b'. By etching treatment using said layer as a mask, a plurality of trenches 3 are formed at positions facing a plurality of the windows 2a' on the main surface la side of the substrate 1 respectively. Well layers 4a and barrier layers 4b are alternately formed in order on the substrate l. A plurality of superlattice layers 4 are formed wherein the well layers 4a and the barrier layers 4b are alternately laminated in order at positions in a plurality of the trenches 4 facing a plurality of the windows 2a' of the dielectric layer 2' respectively. |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SUGIURA HIDEO,YAMADA TAKESHI,IGA RYUZO. Formation of superlattice layer. JP1992078129A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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