Composite resonator type semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; HAYASHI HIROSHI; MIYAUCHI NOBUYUKI; SAKII SHIGEKI; MORIMOTO TAIJI |
| 发表日期 | 1985-12-07 |
| 专利号 | JP1985247987A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Composite resonator type semiconductor laser element |
| 英文摘要 | PURPOSE:To stabilize oscillation wavelengths within a wide temperature range by coating each resonant surface for extracting output laser beams with dielectric films and controlling film thickness so that the reflectivity of each resonant surface to an oscillation wavelength lambda is set to a proper value. CONSTITUTION:An N type GaAs current stopping layer 12 is deposited onto a P type GaAs substrate 11, and a V-shaped striped groove reaching to the substrate 11 from the surface of the layer 12 is processed through etching to form a current path. A P type GaAlAs clad layer 13, a P type GaAlAs active layer 14, an N type GaAlAs clad layer 15 and an N type GaAs cap layer 16 are deposited onto the layer 12 through a liquid phase epitaxial growth method in succession. Au-Zn are evaporated onto the back of the substrate 11 to shape a P type electrode 17, and Au-Ge-Ni are evaporated onto the cap layer 16 to form an N type electrode 18. |
| 公开日期 | 1985-12-07 |
| 申请日期 | 1984-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67686]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,HAYASHI HIROSHI,MIYAUCHI NOBUYUKI,et al. Composite resonator type semiconductor laser element. JP1985247987A. 1985-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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