Planar type semiconductor device
文献类型：专利
| 作者 | HASHIMOTO TOSHIO; MIYAUCHI EIZO; BABA YASUO; TAKAMORI AKIRA; ARIMOTO HIROSHI; MORITA TETSUO |
| 发表日期 | 1986-08-12 |
| 专利号 | JP1986179573A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Planar type semiconductor device |
| 英文摘要 | PURPOSE:To grow an excellent epitaxial crystal, and to obtain a planar type semiconductor device having high performance by conducting all of a series of operations, such as MBE, mask-less ion implantation, etc. in a vacuum. CONSTITUTION:A non-doped GaAs layer 8 is grown on a GaAs substrate crystal 7 under the same vacuum, N-type Si ion beams are focussed, ions are implanted in a mask-less manner, and a buried conductive layer for a collector is formed. A non-doped GaAs layer 10 is grown on a sample crystal to which ions are implanted again, Si is implanted to a non-doped GaAs layer 11 to shape a leading-out conductive layer for the collector, and P-type Be is implanted to form a base layer 12. A non-doped Al0.3Ga0.7As layer 13 and a non-doped GaAs layer 14 are grown on the layer 12, Si ions are implanted to each shape a leading-out electrode 15 for the collector and an emitter 16, Be is implanted to a leading-out electrode section 17 for the base layer, and lastly an SiO2 protective film is attached onto the surface of the sample crystal and doped Si and Be are activated electrically through heat treatment, thus manufacturing a planar type hetero-junction bipolar transistor. |
| 公开日期 | 1986-08-12 |
| 申请日期 | 1985-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67694]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | HASHIMOTO TOSHIO,MIYAUCHI EIZO,BABA YASUO,et al. Planar type semiconductor device. JP1986179573A. 1986-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。