Self-alignment type semiconductor laser with window and manufacture thereof
文献类型：专利
| 作者 | KOMAZAKI IWAO |
| 发表日期 | 1991-01-22 |
| 专利号 | JP1991014281A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Self-alignment type semiconductor laser with window and manufacture thereof |
| 英文摘要 | PURPOSE:To achieve a large-output semiconductor laser by providing a current block layer on the side surface of a mesa and then connecting an active region and a window region in taper shape. CONSTITUTION:Only an active region is covered with a resist 20 and the epitaxial crystal surface is exposed only for 50mum long window region at each 300mum interval in forward mesa direction, thus eliminating an active layer 3 completely. Then, the resist 20 is eliminated completely and a p-type light guide layer 8, an n-type current block layer 9, and an n-type current block layer 10 are embedded on the entire surface. Only the window region is covered with resist, the active region is eliminated until the inside of a p type cap layer 5 by a phosphoric acid etching liquid, and the window and active regions are flattened. SiO2 is formed on the surface of a wafer and 6mum wide striped- shaped SiO2 film 21 is left in inverse mesa direction. A p-type clad layer 4 is left by 0.3-0.4mum in thickness on both sides of mesa stripe. Regrowth is made with the SiO2 film 21 being attached to, an n-type current block layer 11 is allowed to grow selectively, and both sides of mesa stripe are embedded. |
| 公开日期 | 1991-01-22 |
| 申请日期 | 1989-06-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67696]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOMAZAKI IWAO. Self-alignment type semiconductor laser with window and manufacture thereof. JP1991014281A. 1991-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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