Planar type semiconductor laser and planar type laser type optical function element
文献类型：专利
| 作者 | NUMAI TAKAAKI |
| 发表日期 | 1992-09-18 |
| 专利号 | JP1992263482A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Planar type semiconductor laser and planar type laser type optical function element |
| 英文摘要 | PURPOSE:To obtain a planar type semiconductor laser and a planar type semiconductor laser type optical function element where laser rays can be efficiently oscillated and an ultrahigh speed modulation of over 20GHz can be expected. CONSTITUTION:An N-type GaAs/AlAs multilayered reflection film 20, an N-type GaAs layer 11, an undoped In0.2Ga0.8As active layer 12, a P-type GaAs clad layer 13, and a P-type GaAs/AlAs multilayered reflection film 21 are successively laminated on an N-type GaAs substrate 10, and an electrode 31 is provided to the semiconductor multilayered film 2 The semiconductor multilayered film 21 under the electrode 31 is lessened in number of layers so as to lessened in electrical resistance. On the other hand, the other part of a semiconductor multilayered film where the electrode 31 is not formed is enhanced in number of layers to be enhanced in reflectivity so as to realize a planar semiconductor laser low in oscillation threshold current. |
| 公开日期 | 1992-09-18 |
| 申请日期 | 1991-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67704]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NUMAI TAKAAKI. Planar type semiconductor laser and planar type laser type optical function element. JP1992263482A. 1992-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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